Modeling Frequency Dependent Dielectrics in TLML. R. A. X. de Menezes and W. J. R. Hoefer
IEEE Antennas and Propagation Society International Symposium, pp 1140-1143, University of Washington, Seattle, Washington USA, June 19-24 1994.
AbstractThis work presents two different techniques to include frequency dependent dispersive dielectrics in a two-dimensional TLM shunt mesh. The first technique separates the frequency independent and frequency dependent parts of the permittivity, solving the first one by conventional TLM and the second one by a recursive formulation. The other technique models the permittivity as an admittance connected to the TLM node. Both approaches are presented in detail and the comparison between theoretical and simulated results is shown.